The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
May. 24, 2007
Chin-lung Chen, Hsin-Chu Hsien, TW;
Chin-Lung Chen, Hsin-Chu Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention pertains to a high-voltage MOS device. The high-voltage MOS device includes a substrate, a first well, a first field oxide layer enclosing a drain region, a second field oxide enclosing a source region, and a third field oxide layer encompassing the first and second field layers with a device isolation region in between. A channel region is situated between the first and second field oxide layers. A gate oxide layer is provided on the channel region. A gate is stacked on the gate oxide layer. A device isolation diffusion layer is provided in the device isolation region.