The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2010

Filed:

Jan. 29, 2008
Applicants:

Mikio Hongo, Yokohama, JP;

Sachio Uto, Yokohama, JP;

Mineo Nomoto, Yokohama, JP;

Toshihiko Nakata, Hiratsuka, JP;

Mutsuko Hatano, Kokubunji, JP;

Shinya Yamaguchi, Mitaka, JP;

Makoto Ohkura, Fuchu, JP;

Inventors:

Mikio Hongo, Yokohama, JP;

Sachio Uto, Yokohama, JP;

Mineo Nomoto, Yokohama, JP;

Toshihiko Nakata, Hiratsuka, JP;

Mutsuko Hatano, Kokubunji, JP;

Shinya Yamaguchi, Mitaka, JP;

Makoto Ohkura, Fuchu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0376 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.


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