The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2010

Filed:

May. 11, 2004
Applicants:

Jea Gun Park, Seongnam, KR;

Takeo Katoh, Seoul, KR;

Won MO Lee, Seoul, KR;

Hyun Goo Kang, Busan, KR;

Sung Jun Kim, Gwangju, KR;

Un Gyu Paik, Seoul, KR;

Inventors:

Jea Gun Park, Seongnam, KR;

Takeo Katoh, Seoul, KR;

Won Mo Lee, Seoul, KR;

Hyun Goo Kang, Busan, KR;

Sung Jun Kim, Gwangju, KR;

Un Gyu Paik, Seoul, KR;

Assignees:

Sumco Corporation, Tokyo, JP;

Hanyang Hak Won Co., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during chemical mechanical polishing process of the oxide layer formed on the surface of the wafer, and contains abrasive particles and an additive, wherein the size of the abrasive particles and the concentration of the additive are controlled within predetermined ranges in order to control the deviation of thickness (OTD) of the oxide layer below a certain level after the chemical mechanical polishing process.


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