The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Dec. 11, 2008
Martin A. Knapp, Laufen, DE;
Guido Probst, Bautzen, DE;
Martin A. Knapp, Laufen, DE;
Guido Probst, Bautzen, DE;
ASM International N.V., , NL;
Abstract
Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl, NHand SiHas precursors. Substrates are provided in a deposition chamber of the batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by flowing TiClinto the deposition chamber simultaneously with NH. The deposition chamber is subsequently flushed with NH. to prepare the TiN layer for silicon incorporation. SiHis subsequently flowed into the deposition chamber. Silicon from the SiHis incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NHbefore the silicon precursor has been found to facilitate efficient silicon incorporation into the TiN layers to form TiSiN.