The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Nov. 02, 2006
Koichi Ohto, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Noboru Morita, Kanagawa, JP;
Sadayuki Ohnishi, Kanagawa, JP;
Koji Arita, Kanagawa, JP;
Ryohei Kitao, Kanagawa, JP;
Yoichi Sasaki, Kanagawa, JP;
Koichi Ohto, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Noboru Morita, Kanagawa, JP;
Sadayuki Ohnishi, Kanagawa, JP;
Koji Arita, Kanagawa, JP;
Ryohei Kitao, Kanagawa, JP;
Yoichi Sasaki, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
In a method of manufacturing a semiconductor device where at least one insulating layer structure having a metal wiring constitution is formed to thereby construct a multi-layered wiring arrangement, a first SiOCH layer is produced. Then, a surface section of the first SiOCH layer is treated to change the surface section of the first SiOCH layer to a second SiOCH layer which features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer and an oxygen (O) density higher than that of the first SiOCH layer. Finally, a silicon dioxide (SiO) layer is formed on the second SiOCH layer.