The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

Mar. 05, 2009
Applicants:

Srinivas Doddi, Fremont, CA (US);

Emmanuel Drege, San Jose, CA (US);

Nickhil Jakatdar, Los Altos, CA (US);

Junwei Bao, Palo Alto, CA (US);

Inventors:

Srinivas Doddi, Fremont, CA (US);

Emmanuel Drege, San Jose, CA (US);

Nickhil Jakatdar, Los Altos, CA (US);

Junwei Bao, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 15/18 (2006.01); G01R 31/26 (2006.01); G01R 31/303 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured using a metrology device. A second diffraction signal is generated using a machine learning system, where the machine learning system receives as an input one or more parameters that characterize a profile of the structure to generate the second diffraction signal. The first and second diffraction signals are compared. When the first and second diffraction signals match within a matching criterion, a feature of the structure is determined based on the one or more parameters or the profile used by the machine learning system to generate the second diffraction signal.


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