The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Jan. 17, 2008
Atsushi Kawasumi, Kawasaki, JP;
Tetsu Morooka, Tsukuba, JP;
Atsushi Kawasumi, Kawasaki, JP;
Tetsu Morooka, Tsukuba, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A first transfer transistor includes a first diffusion layer connected to a first bit line, and a second diffusion layer connected to a first storage node, the first diffusion layer is provided in a substrate, the second diffusion layer is provided in a bottom part of a recess provided in the substrate, a channel region of the first transfer transistor is offset with respect to the second diffusion layer toward the first storage node, and the offset part functions as a resistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile