The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Jul. 18, 2008
An-thung Cho, Hsin-Chu, TW;
Chia-tien Peng, Hsin-Chu, TW;
Kun-chih Lin, Hsin-Chu, TW;
Wen-jen Chiang, Hsinchu, TW;
Chih-yang Chen, Hsinchu, TW;
Chrong-jung Lin, Hsinchu, TW;
Ya-chin King, Hsinchu, TW;
Chih-wei Chao, Hsin-Chu, TW;
Chien-sen Weng, Hsin-Chu, TW;
Feng-yuan Gan, Hsin-Chu, TW;
An-Thung Cho, Hsin-Chu, TW;
Chia-Tien Peng, Hsin-Chu, TW;
Kun-Chih Lin, Hsin-Chu, TW;
Wen-Jen Chiang, Hsinchu, TW;
Chih-Yang Chen, Hsinchu, TW;
Chrong-Jung Lin, Hsinchu, TW;
Ya-Chin King, Hsinchu, TW;
Chih-Wei Chao, Hsin-Chu, TW;
Chien-Sen Weng, Hsin-Chu, TW;
Feng-Yuan Gan, Hsin-Chu, TW;
Au Optronics Corporation, Hsin-Chu, TW;
Abstract
A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.