The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Oct. 07, 2009
Edward Yi. Chang, Hsinchu County, TW;
Yun-chi Wu, Chiayi, TW;
Yueh-chin Lin, Taipei County, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
Disclosed herein are a structure of a metal oxide semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) suitable for use in a semiconductor device, such as a single-pole-double-throw (SPDT) switch of a monolithic microwave integrated circuit (MMIC); and a method of producing the same. The MOS-PHEMT structure is characterized in having a gate dielectric layer formed by atomic deposition from a gate dielectric selected from the group consisting of AlO, HfO, LaO, and ZrO, and thereby rendering the semiconductor structure comprising the same, such as a high frequency switch device, to have less DC power loss, less insertion loss and better isolation.