The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Sep. 15, 2008
Shunpei Yamazaki, Setagaya, JP;
Akiharu Miyanaga, Hadano, JP;
Ko Inada, Atsugi, JP;
Yuji Iwaki, Isehara, JP;
Shunpei Yamazaki, Setagaya, JP;
Akiharu Miyanaga, Hadano, JP;
Ko Inada, Atsugi, JP;
Yuji Iwaki, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd,, Atsugi-shi, Kanagawa-ken, JP;
Abstract
To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with Hions by an ion doping apparatus. Hions accelerated by high voltage are separated to be three Hions at a semiconductor wafer surface, and the Hions cannot enter deeply. Therefore, Hions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.