The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Jun. 05, 2008
Yasuhiko Ueda, Tokyo, JP;
Hiroyuki Fujimoto, Tokyo, JP;
Yasuhiko Ueda, Tokyo, JP;
Hiroyuki Fujimoto, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A semiconductor apparatus including a trench gate transistor having at least an active region surrounded by a device isolation insulating film; a trench provided by bringing both ends thereof into contact with the device isolation insulating film in the active region; a gate electrode formed in the trench via a gate insulating film; and a diffusion layer formed close to the trench; on a semiconductor substrate, and also includes an opening portion positioned on one surface of the semiconductor substrate; a pair of first inner walls positioned in a side of the device isolation insulating film and connected with the opening portion; a pair of second inner walls positioned in a side of the active region and connected with the opening portion; and a bottom portion positioned opposite to the opening portion and connected with the first inner walls and the second inner walls, wherein a cross sectional outline of the second inner wall is substantially linear, and a burr generated inside the trench is removed or reduced.