The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Aug. 01, 2008
Applicants:
Chiaki Kudou, Hyogo, JP;
Kazuya Utsunomiya, Hyogo, JP;
Masashi Hayashi, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate electrodeformed on a silicon carbide substrateincludes a silicon lower layerA and a silicide upper layerB provided on the silicon lower layerA, the silicide upper layerB being made of a compound of a first metal and silicon. A source electrodeformed on the surface of the silicon carbide substrateand in contact with an n type source region and a pregion contains second metal silicide different from the first metal silicide. Side faces of the silicon lower layerA are covered with an insulator.
Published as:
WO2009019837A1; CN101548387A; JP4365894B2; US2010075474A1; JPWO2009019837A1; US7829416B2; CN101548387B;