The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Jan. 11, 2006
Robert C. Linares, Sherborn, MA (US);
Patrick J. Doering, Holliston, MA (US);
Bryant Linares, Sherborn, MA (US);
Alfred R. Genis, East Douglas, MA (US);
William W. Dromeshauser, Norwell, MA (US);
Michael Murray, Mountain View, CA (US);
Alicia E. Novak, Denver, CO (US);
John M. Abrahams, Scarsdale, NY (US);
Robert C. Linares, Sherborn, MA (US);
Patrick J. Doering, Holliston, MA (US);
Bryant Linares, Sherborn, MA (US);
Alfred R. Genis, East Douglas, MA (US);
William W. Dromeshauser, Norwell, MA (US);
Michael Murray, Mountain View, CA (US);
Alicia E. Novak, Denver, CO (US);
John M. Abrahams, Scarsdale, NY (US);
Apollo Diamond, Inc, Framingham, MA (US);
Abstract
Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.