The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Nov. 27, 2007
Kazuhiko Fukutani, Santa Cruz, CA (US);
Takao Yonehara, Atsugi, JP;
Hirokatsu Miyata, Hadano, JP;
Yohei Ishida, Kawasaki, JP;
Tohru Den, Setagaya-ku, JP;
Kazuhiko Fukutani, Santa Cruz, CA (US);
Takao Yonehara, Atsugi, JP;
Hirokatsu Miyata, Hadano, JP;
Yohei Ishida, Kawasaki, JP;
Tohru Den, Setagaya-ku, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.