The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Feb. 24, 2006
Laurence Morancho-montagner, Ramonville, FR;
Jean-louis Chaptal, Toulouse, FR;
Serge DE Bortoli, Castanet Tolosan, FR;
Gerard Sarrabayrouse, Mouchan, FR;
Laurence Morancho-Montagner, Ramonville, FR;
Jean-Louis Chaptal, Toulouse, FR;
Serge De Bortoli, Castanet Tolosan, FR;
Gerard Sarrabayrouse, Mouchan, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
The method of and apparatus for testing a floating gate non-volatile memory semiconductor device comprising an array of cells including floating gates for storing data in the form of electrical charge. The method includes applying a test pattern of said electrical charge to the floating gates, exposing the device to energy to accelerate leakage of the electrical charges out of the cells, and subsequently comparing the remaining electrical charges in the cells to the test pattern. The energy is applied in the form of electromagnetic radiation of a wavelength such as to excite the charges in the floating gates to an energy level sufficient for accelerating charge loss from the floating gates of defective cells relative to charge loss from non-defective cells. The wavelength is preferably in the range of 440 to 560 nm.