The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Dec. 10, 2007
Yung-hsu Chen, Hsinchu, TW;
Chun-yu Liao, Taichung, TW;
Chia-jung Chen, Zhubei, TW;
Fu-nian Liang, Lujhou, TW;
Yung-Hsu Chen, Hsinchu, TW;
Chun-Yu Liao, Taichung, TW;
Chia-Jung Chen, Zhubei, TW;
Fu-Nian Liang, Lujhou, TW;
Macronix International Co., Ltd., Hsin-Chu, TW;
Abstract
A memory circuit with relatively high reading speed and relatively low switching noise is provided. The memory circuit includes an output buffer device having a first input receiving a data signal having a first voltage level, a second input receiving a pre-set voltage having a second voltage level and an output outputting the data signal, and a pre-set circuit constructed by a pair of MOSFETs and providing the pre-set voltage to the second input before the output buffer device receives the data signal. The pre-set circuit receives a control signal activating the pair of MOSFETs at the same time, and when the output buffer device receives the data signal, a voltage level of the second input is swung from the second level to the first voltage level.