The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Dec. 11, 2002
Stefanie Ruth Chiras, Peekskill, NY (US);
Michael Wayne Lane, Cortlandt Manor, NY (US);
Sandra Guy Malhotra, Beacon, NY (US);
Fenton Reed MC Feely, Ossining, NY (US);
Robert Rosenberg, Cortlandt Manor, NY (US);
Carlos Juan Sambucetti, Croton on Hudson, NY (US);
Philippe Mark Vereecken, Sleepy Hollow, NY (US);
Stefanie Ruth Chiras, Peekskill, NY (US);
Michael Wayne Lane, Cortlandt Manor, NY (US);
Sandra Guy Malhotra, Beacon, NY (US);
Fenton Reed Mc Feely, Ossining, NY (US);
Robert Rosenberg, Cortlandt Manor, NY (US);
Carlos Juan Sambucetti, Croton on Hudson, NY (US);
Philippe Mark Vereecken, Sleepy Hollow, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In integrated circuit technology; an electromigration and diffusion sensitive conductor of a metal such as copper and processing procedure therefore is provided, wherein, at a planarized chemical mechanical processed interfacing surface, the conductor metal is positioned in a region of a selectable low K eff dielectric material surrounded by a material selected to be protection from outdiffusion and a source of a film thickness cap that is to form over the conductor metal and/or serve as a catalytic layer for electroless selective deposition of a CoWP capping .