The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2010

Filed:

Sep. 08, 2008
Applicants:

Kazunori Inoue, Tokyo, JP;

Nobuaki Ishiga, Kumamoto, JP;

Kensuke Nagayama, Kumamoto, JP;

Naoki Tsumura, Kumamoto, JP;

Takumi Nakahata, Tokyo, JP;

Kazumasa Kawase, Tokyo, JP;

Inventors:

Kazunori Inoue, Tokyo, JP;

Nobuaki Ishiga, Kumamoto, JP;

Kensuke Nagayama, Kumamoto, JP;

Naoki Tsumura, Kumamoto, JP;

Takumi Nakahata, Tokyo, JP;

Kazumasa Kawase, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.


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