The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Aug. 12, 2009
Michael C. Gaidis, Yorktown Heights, NY (US);
Carl Radens, Hopewell Junction, NY (US);
Lawrence A. Clevenger, Hopewell Junction, NY (US);
Timothy J. Dalton, Yorktown Heights, NY (US);
Louis L. C. Hsu, Fishkill, NY (US);
Keith Kwong Hon Wong, Hopewell Junction, NY (US);
Chih-chao Yang, Albany, NY (US);
Michael C. Gaidis, Yorktown Heights, NY (US);
Carl Radens, Hopewell Junction, NY (US);
Lawrence A. Clevenger, Hopewell Junction, NY (US);
Timothy J. Dalton, Yorktown Heights, NY (US);
Louis L. C. Hsu, Fishkill, NY (US);
Keith Kwong Hon Wong, Hopewell Junction, NY (US);
Chih-Chao Yang, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile