The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2010

Filed:

Mar. 25, 2009
Applicants:

Toshiki Takahashi, Oshu, JP;

Kohei Fukushima, Oshu, JP;

Koichi Orito, Oshu, JP;

Jun Sato, Nirasaki, JP;

Inventors:

Toshiki Takahashi, Oshu, JP;

Kohei Fukushima, Oshu, JP;

Koichi Orito, Oshu, JP;

Jun Sato, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/471 (2006.01);
U.S. Cl.
CPC ...
Abstract

A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.


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