The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Jul. 13, 2009
Applicants:
Akihito Ohno, Tokyo, JP;
Masayoshi Takemi, Tokyo, JP;
Inventors:
Akihito Ohno, Tokyo, JP;
Masayoshi Takemi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.