The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Jan. 22, 2009
Yuan-hung Liu, Hsin-Chu, TW;
Ming Chyi Liu, Hsinchu, TW;
Yeur-luen Tu, Taichung, TW;
Chi-hsin Lo, Zhubei, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Yuan-Hung Liu, Hsin-Chu, TW;
Ming Chyi Liu, Hsinchu, TW;
Yeur-Luen Tu, Taichung, TW;
Chi-Hsin Lo, Zhubei, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method includes forming an amorphous carbon layer over a first dielectric layer formed over a substrate, forming a second dielectric layer over the amorphous carbon layer; and forming an opening within the amorphous carbon layer and second dielectric layer by a first etch process to partially expose a top surface of the first dielectric layer. A substantially conformal metal-containing layer is formed over the second dielectric layer and within the opening. The second dielectric layer and a portion of the metal-containing layer are removed. The amorphous carbon layer is removed by an oxygen-containing plasma process to expose a top surface of the first dielectric layer. An insulating layer is formed over the metal-containing layer, and a second metal-containing layer is formed over the insulating layer to form a capacitor.