The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Jun. 30, 2008
Yong Soo Joung, Seoul, KR;
Kyoung Bong Rouh, Goyang-si, KR;
Hye Jin Seo, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of fabricating a semiconductor device having a gate spacer layer with a uniform thickness wherein a gate electrode layer pattern is formed on a substrate and ion implantation processes of respectively different doses are formed on side walls of the gate electrode layer patterns in respective first and second regions of the substrate. A first gate spacer layer is formed on the gate electrode layer pattern where the ion implantation process is performed. A second gate spacer layer is formed on the first gate spacer layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile