The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Sep. 28, 2007
Wei Ti Lee, San Jose, CA (US);
Yen-chih Wang, Hsinchu, TW;
Mohd Fadzli Anwar Hassan, Sunnyvale, CA (US);
Ryeun Kwan Kim, Ichon-shi, KR;
Hyung Chul Park, San Jose, CA (US);
Ted Guo, Palo Alto, CA (US);
Alan A. Ritchie, Pleasanton, CA (US);
Wei Ti Lee, San Jose, CA (US);
Yen-Chih Wang, Hsinchu, TW;
Mohd Fadzli Anwar Hassan, Sunnyvale, CA (US);
Ryeun Kwan Kim, Ichon-shi, KR;
Hyung Chul Park, San Jose, CA (US);
Ted Guo, Palo Alto, CA (US);
Alan A. Ritchie, Pleasanton, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.