The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jul. 17, 2008
Applicants:
Yoshihiro Kitamura, Tokyo, JP;
Toru Miyazaki, Tokyo, JP;
Inventors:
Yoshihiro Kitamura, Tokyo, JP;
Toru Miyazaki, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes an active region having a groove, a gate insulating film, and a gate electrode. The gate electrode may include first and second layers. The first layer extends along the gate insulating film. The first layer is electrically conductive. The second layer extends along the first layer. The second layer is separate from the gate insulating film by the first layer.