The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Sep. 19, 2008
Masao Shingu, Kawasaki, JP;
Shoko Kikuchi, Kawasaki, JP;
Akira Takashima, Fuchu, JP;
Tsunehiro Ino, Fujisawa, JP;
Koichi Muraoka, Sagamihara, JP;
Masao Shingu, Kawasaki, JP;
Shoko Kikuchi, Kawasaki, JP;
Akira Takashima, Fuchu, JP;
Tsunehiro Ino, Fujisawa, JP;
Koichi Muraoka, Sagamihara, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a semiconductor device, the side walls are made of SiO, SiN or SiON, and the top insulating film or gate insulating film is made of an oxide including Al, Si, and metal element M so that the number ratio Si/M is set to no less than a number ratio Si/M at a solid solubility limit of SiOcomposition in a composite oxide including metal element M and Al and set to no more than a number ratio Si/M at the condition that the dielectric constant is equal to the dielectric constant of AlOand so that the number ratio Al/M is set to no less than a number ratio Al/M where the crystallization of an oxide of said metal element M is suppressed due to the Al element and set to no more than a number ratio Al/M where the crystallization of the AlOis suppressed due to the metal element M.