The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jul. 31, 2006
Yowjuang (Bill) Liu, San Jose, CA (US);
Cheng-hsiung Huang, Cupertino, CA (US);
Chih-ching Shih, Pleasanton, CA (US);
Yowjuang (Bill) Liu, San Jose, CA (US);
Cheng-Hsiung Huang, Cupertino, CA (US);
Chih-Ching Shih, Pleasanton, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
A transistor fabricated on a semiconductor substrate includes a source and a drain in the substrate; a gate on the substrate, the gate being insulated from the substrate by gate dielectric; barrier layers covering two sides of the gate and the gate dielectric; spacers of high-k material covering the barrier layers; and nitride spacers covering the spacers of high-k material. The spacers of high-k material significantly increase the node capacitance of the transistor and therefore reduce the transistor's soft error rate.