The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Dec. 31, 2008
Dong Ha Jung, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Chang Soo Park, Seoul, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Nam Yeal Lee, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Chang Soo Park, Seoul, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Nam Yeal Lee, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for manufacturing a semiconductor device includes forming an insulation layer having a contact hole on a semiconductor substrate. A metal silicide layer is deposited on a surface of the contact hole and the insulation layer to have a concentration gradient that changes from a silicon-rich composition to a metal-rich composition, with the lower portion of the metal silicide layer having the silicon-rich composition and the upper portion of the metal silicide layer having the metal-rich composition. The metal silicide layer is then annealed so that the compositions of metal and silicon in the metal silicide layer become uniform.