The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jun. 15, 2004
Applicants:
Masatomo Sumiya, Hamamatsu, JP;
Shunro Fuke, Hamamatsu, JP;
Inventors:
Masatomo Sumiya, Hamamatsu, JP;
Shunro Fuke, Hamamatsu, JP;
Assignee:
Japan Science and Technology Agency, Kawaguchi-shi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face () and a N face () are formed over a c face sapphire (AlO) substrate (), the Ga face () growing in +c face, and the N face () growing in −c face.