The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Oct. 26, 2004
Frank Dimeo, Jr., Danbury, CT (US);
James Dietz, Scarsdale, NY (US);
W. Karl Olander, Indian Shores, FL (US);
Robert Kaim, Brookline, MA (US);
Steven E. Bishop, Rio Rancho, NM (US);
Jeffrey W. Neuner, Bethel, CT (US);
Jose I. Arno, Brookfield, CT (US);
Frank DiMeo, Jr., Danbury, CT (US);
James Dietz, Scarsdale, NY (US);
W. Karl Olander, Indian Shores, FL (US);
Robert Kaim, Brookline, MA (US);
Steven E. Bishop, Rio Rancho, NM (US);
Jeffrey W. Neuner, Bethel, CT (US);
Jose I. Arno, Brookfield, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.