The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2010

Filed:

Jun. 04, 2008
Applicants:

Naoya Tokiwa, Fujisawa, JP;

Kazushige Kanda, Kawasaki, JP;

Toshiaki Edahiro, Yokohama, JP;

Koji Hosono, Fujisawa, JP;

Takuya Futatsuyama, Yokohama, JP;

Shigeo Ohshima, Kawasaki, JP;

Inventors:

Naoya Tokiwa, Fujisawa, JP;

Kazushige Kanda, Kawasaki, JP;

Toshiaki Edahiro, Yokohama, JP;

Koji Hosono, Fujisawa, JP;

Takuya Futatsuyama, Yokohama, JP;

Shigeo Ohshima, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a nonvolatile memory device includes: a memory cell array including memory cells each having a variable resistance element for nonvolatilely storing data identified by an electrically rewritable resistance value; a first data latch storing write and erase data to be written on a given group of memory cells of the memory cell array for a write and erase operation; and a second data latch storing reference data for performing a compensation operation of the given group to compensate write and erase disturbance accompanied by the write or erase operation.


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