The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jun. 12, 2007
Kuo-hua Pan, Hsin-Chu, TW;
Ken Liao, Hsin-Chu, TW;
Augus Tai, Hukou Township, TW;
Harry Chuang, Austin, TX (US);
Kuo-Hua Pan, Hsin-Chu, TW;
Ken Liao, Hsin-Chu, TW;
Augus Tai, Hukou Township, TW;
Harry Chuang, Austin, TX (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; an epitaxial region having at least a portion in the semiconductor substrate and adjacent to the gate stack, wherein the epitaxial region comprises an impurity of a first conductivity type; a first portion of the semiconductor substrate adjoining the epitaxial region, wherein the first portion of the semiconductor substrate is of the first conductivity type; and a second portion of the semiconductor substrate adjoining the first portion. The second portion of the semiconductor substrate is of a second conductivity type opposite the first conductivity type. A silicide region is formed on the epitaxial region and the first and the second portions of the semiconductor substrate.