The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Apr. 30, 2008
Applicants:
Kyung-in Choi, Seoul, KR;
Gil-heyun Choi, Seoul, KR;
Hyun-bae Lee, Seoul, KR;
Jong-won Hong, Gyeonggi-do, KR;
Jong-myeong Lee, Gyeonggi-do, KR;
Inventors:
Kyung-In Choi, Seoul, KR;
Gil-Heyun Choi, Seoul, KR;
Hyun-Bae Lee, Seoul, KR;
Jong-Won Hong, Gyeonggi-do, KR;
Jong-Myeong Lee, Gyeonggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.