The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Dec. 22, 2005
Li-te S. Lin, Hsinchu County, TW;
Pang-yen Tsai, Hsinchu Hsian, TW;
Chih-chien Chang, Miow-Li County, TW;
Tze-liang Lee, Hsinchu, TW;
Li-Te S. Lin, Hsinchu County, TW;
Pang-Yen Tsai, Hsinchu Hsian, TW;
Chih-Chien Chang, Miow-Li County, TW;
Tze-Liang Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for manufacturing a semiconductor device includes providing a substrate comprising silicon, cleaning the substrate, performing a first low pressure chemical vapor deposition (LPCVD) process using a first source gas to selectively deposit a seeding layer of silicon (Si) over the substrate, performing a second LPCVD process using a second source gas to selectively deposit a first layer of silicon germanium (SiGe) over the layer of Si, the second source gas including hydrochloride at a first flow rate, and performing a third LPCVD process using a third source gas including hydrochloride at a second flow rate. The first flow rate is substantially lower than the second flow rate.