The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Sep. 16, 2004
Daisuke Matsushita, Kanagawa-Ken, JP;
Koichi Muraoka, Kanagawa-Ken, JP;
Seiji Inumiya, Kanagawa-Ken, JP;
Koichi Kato, Kanagawa-Ken, JP;
Kazuhiro Eguchi, Kanagawa-Ken, JP;
Mariko Takayanagi, Kanagawa-Ken, JP;
Yasushi Nakasaki, Kanagawa-Ken, JP;
Daisuke Matsushita, Kanagawa-Ken, JP;
Koichi Muraoka, Kanagawa-Ken, JP;
Seiji Inumiya, Kanagawa-Ken, JP;
Koichi Kato, Kanagawa-Ken, JP;
Kazuhiro Eguchi, Kanagawa-Ken, JP;
Mariko Takayanagi, Kanagawa-Ken, JP;
Yasushi Nakasaki, Kanagawa-Ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.