The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jun. 27, 2008
Kwan-woo DO, Ichon-shi, KR;
Jae-sung Roh, Ichon-shi, KR;
Kee-jeung Lee, Ichon-shi, KR;
Deok-sin Kil, Ichon-shi, KR;
Young-dae Kim, Ichon-shi, KR;
Jin-hyock Kim, Ichon-shi, KR;
Kyung-woong Park, Ichon-shi, KR;
Kwan-Woo Do, Ichon-shi, KR;
Jae-Sung Roh, Ichon-shi, KR;
Kee-Jeung Lee, Ichon-shi, KR;
Deok-Sin Kil, Ichon-shi, KR;
Young-Dae Kim, Ichon-shi, KR;
Jin-Hyock Kim, Ichon-shi, KR;
Kyung-Woong Park, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for fabricating a capacitor includes providing a substrate having a capacitor region is employed, forming a first RuOlayer over the substrate, forming a Ru layer for a lower electrode over the first RuOlayer and deoxidizing the first RuOlayer, forming a dielectric layer over the Ru layer for a lower electrode, and forming a conductive layer for an upper electrode over the dielectric layer, wherein the first RuOlayer contains oxygen in an amount less than an oxygen amount of a RuOlayer.