The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jul. 30, 2001
Michael A. Vyvoda, Fremont, CA (US);
N. Johan Knall, Sunnyvale, CA (US);
James M. Cleeves, Redwood City, CA (US);
Michael A. Vyvoda, Fremont, CA (US);
N. Johan Knall, Sunnyvale, CA (US);
James M. Cleeves, Redwood City, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A high density plasma oxidation process is provided in which a dielectric film is formed having a predetermined thickness. Plasma oxidation conditions are provided such that the growth rate of the dielectric film is limited in order to produce dielectric layer having a precise thickness and uniformity. The high density plasma oxidation process can be used to fabricate gate oxide layers, passivation layers and antifuse layers in semiconductor devices such as semiconductor memory devices and multi-level memory arrays.