The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Aug. 13, 2007
Applicants:
Makoto Iwai, Kasugai, JP;
Katsuhiro Imai, Nagoya, JP;
Takatomo Sasaki, Minoh, JP;
Fumio Kawamura, Minoh, JP;
Minoru Kawahara, Saitama, JP;
Hiroaki Isobe, Taki-Gun, JP;
Inventors:
Makoto Iwai, Kasugai, JP;
Katsuhiro Imai, Nagoya, JP;
Takatomo Sasaki, Minoh, JP;
Fumio Kawamura, Minoh, JP;
Minoru Kawahara, Saitama, JP;
Hiroaki Isobe, Taki-Gun, JP;
Assignees:
NGK Insulators, Ltd., Nagoya, JP;
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 28/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.