The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2010

Filed:

Jul. 27, 2007
Applicants:

Sairaju Tallavarjula, Santa Clara, CA (US);

Aaron Hunter, Santa Cruz, CA (US);

Joseph Ranish, San Jose, CA (US);

Johanes Swenberg, Los Gatos, CA (US);

Robert M. Haney, Mountain View, CA (US);

Inventors:

Sairaju Tallavarjula, Santa Clara, CA (US);

Aaron Hunter, Santa Cruz, CA (US);

Joseph Ranish, San Jose, CA (US);

Johanes Swenberg, Los Gatos, CA (US);

Robert M. Haney, Mountain View, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.


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