The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2010

Filed:

Jan. 25, 2008
Applicants:

Sam-kyu Won, Hwaseong-si, KR;

Jae-won Cha, Seoul, KR;

Kwang-ho Baek, Hwaseong-si, KR;

Inventors:

Sam-Kyu Won, Hwaseong-si, KR;

Jae-Won Cha, Seoul, KR;

Kwang-Ho Baek, Hwaseong-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of programming a multi level cell in a non-volatile memory device includes providing different data to main cells and indicator cells. The main cells and indicator cells have different threshold voltages in accordance with the data. A program operation is performed on a main cell and an indicator cell. A first verifying operation is performed based on a first verifying voltage of the main cell and the indicator cell. The program operation and the first verifying operation are performed repeatedly until a threshold voltage of a first cell of the indicator cells is higher than the first verifying voltage. A second verifying operation is performed on the main cell based on a second verifying voltage when the threshold voltage of the first cell is higher than the first verifying voltage.


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Won, Sam-Kyu. (2010). Non-volatile memory device and a method of programming a multi level cell in the same (U.S. Patent No. 7813188). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7813188

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