The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2010

Filed:

Jan. 16, 2009
Applicant:

Shizhong Mei, Boise, ID (US);

Inventor:

Shizhong Mei, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03L 7/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Locked loops, bias generators, charge pumps and methods for generating control voltages are disclosed, such as a bias generator that generates bias voltages for use by a clock signal generator, such as a voltage controlled delay line, in a locked loop having a phase detector and a charge pump. The charge pump can either charge or discharge a capacitor as a function of a signal from the phase detector to generate a control voltage. The bias generator can receive the control voltage from the capacitor, and it generates bias voltages corresponding thereto. A portion of the bias generator can have a topography that is substantially the same as at least a portion of the topography of the charge pump. As a result, it can cause the charge pump to charge the capacitor at the same rate that it discharges the capacitor over a relatively wide range of control voltages. The charge pump and the bias generator can also include circuitry for limiting the charging of the capacitor when the control voltage is relatively low.


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