The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Apr. 14, 2009
Tetsuya Nakai, Tokyo, JP;
Bong-gyun Ko, Tokyo, JP;
Takeshi Hamamoto, Yokohama, JP;
Takashi Yamada, Ebina, JP;
Tetsuya Nakai, Tokyo, JP;
Bong-Gyun Ko, Tokyo, JP;
Takeshi Hamamoto, Yokohama, JP;
Takashi Yamada, Ebina, JP;
Sumco Corporation, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide filmon the surface of a substrateconstituted of single crystal silicon, oxygen ionsare implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form an buried oxide filminside the substrate. Further included is a step of forming a predetermined-depth concave portiondeeper than substrate surfaceserving as a bulk area on which the mask oxide film is formed on the substrate surfaceserving as an SOI area by forming a thermally grown oxide filmon the substrate surfaceserving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.