The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Aug. 30, 2007
Jeffrey F. Denatale, Thousand Oaks, CA (US);
Robert L. Borwick, Iii, Thousand Oaks, CA (US);
Philip A. Stupar, Oxnard, CA (US);
Jeffrey F. DeNatale, Thousand Oaks, CA (US);
Robert L. Borwick, III, Thousand Oaks, CA (US);
Philip A. Stupar, Oxnard, CA (US);
Rockwell Scientific Licensing LLC, Thousand Oaks, CA (US);
Abstract
A microelectromechanical (MEM) device per the present invention comprises a semiconductor wafer—typically an SOI wafer, a substrate, and a high temperature bond which bonds the wafer to the substrate to form a composite structure. Portions of the composite structure are patterned and etched to define stationary and movable MEM elements, with the movable elements being mechanically coupled to the stationary elements. The high temperature bond is preferably a mechanical bond, with the wafer and substrate having respective bonding pads which are aligned and mechanically connected to form a thermocompression bond to effect the bonding. A metallization layer is typically deposited on the composite structure and patterned to provide electrical interconnections for the device. The metallization layer preferably comprises a conductive refractory material such as platinum to withstand high temperature environments.