The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Feb. 17, 2009
Cheng-hsiao Lai, Chiayi County, TW;
Yuan-che Lee, Taichung, TW;
Tsung-chien Wu, Hualien County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsinchu, TW;
Abstract
A voltage generating apparatus is disclosed. The voltage generating apparatus includes a first N-type transistor and an enhancement MOSFET transistor. The first N-type transistor has a first drain/source coupled to a first voltage, a second drain/source generating a first output voltage, and a gate coupled to a second voltage. The enhancement MOSFET transistor has a first drain/source coupled to the second drain/source of the first N-type transistor, and a second drain/source and a gate coupled to a second voltage. The first N-type transistor is a depletion metal oxide semiconductor field effect transistor (MOSFET).