The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Nov. 12, 2003
Christopher W. Cline, Hopewell Junction, NY (US);
Edward J. Yarmchuk, Mahopac, NY (US);
Vincent A. Arena, Putnam Valley, NY (US);
Donald A. Merte, Poughkeepsie, NY (US);
Thomas Picunko, Scarsdale, NY (US);
Brian J. Wojszynski, Hyde Park, NY (US);
Charles J. Hendricks, Wappingers Falls, NY (US);
Michael E. Scaman, Goshen, NY (US);
Robert S. Olyha, Jr., Poughkeepsie, NY (US);
Arnold Halperin, Peekskill, NY (US);
Christopher W. Cline, Hopewell Junction, NY (US);
Edward J. Yarmchuk, Mahopac, NY (US);
Vincent A. Arena, Putnam Valley, NY (US);
Donald A. Merte, Poughkeepsie, NY (US);
Thomas Picunko, Scarsdale, NY (US);
Brian J. Wojszynski, Hyde Park, NY (US);
Charles J. Hendricks, Wappingers Falls, NY (US);
Michael E. Scaman, Goshen, NY (US);
Robert S. Olyha, Jr., Poughkeepsie, NY (US);
Arnold Halperin, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and apparatus for the non-contact electrical test of both opens and shorts in electronic substrates. Top surface electrical test features are exposed to an ionization source under ambient conditions and the subsequent charge build up is measured as a drain current by probes contacting corresponding bottom surface features. Opens are detected by an absence of a drain current and shorts are detected by turning off the ionization source and re-measuring the bottom surface probes with a varying bias applied to each probe in the array.