The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Aug. 26, 2008
Keiji Mita, Gunma, JP;
Keiji Mita, Gunma, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Sanyo Semiconductor Co., Ltd., Gunma, JP;
Sanyo Semiconductor Manufacturing Co., Ltd., Ojiya-shi, JP;
Abstract
A semiconductor integrated circuit is reduced in size by suppressing lateral extension of an impurity region when impurities in the impurity region are thermally diffused in a semiconductor substrate. A second photoresist is formed on an insulation film. The second photoresist is formed to have second openings Kon both sides of a P-type impurity region so that the second openings Kpartially overlap the P-type impurity region. The insulation film is etched off together with an underlying surface of the semiconductor substrate using the second photoresist as a mask so as to remove the P-type impurity region partially. Then, phosphorus ions (P+) are implanted into the surface of the semiconductor substrate in the etched-off regions using the second photoresist as a mask to form N-type impurity regions that are adjacent the P-type impurity region. After removing the second photoresist, the impurities in the P-type impurity region and the impurities in the N-type impurity region are thermally diffused.