The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jul. 02, 2008
Binghua HU, Plano, TX (US);
Mindricelu P. Eugen, Dallas, TX (US);
Damien T. Gilmore, Allen, TX (US);
Bill A. Wofford, Dallas, TX (US);
Binghua Hu, Plano, TX (US);
Mindricelu P. Eugen, Dallas, TX (US);
Damien T. Gilmore, Allen, TX (US);
Bill A. Wofford, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
One aspect of a semiconductor device includes an active region located in a semiconductor substrate and having an isolation region located therebetween. The active regions have corners adjacent the isolation region. An oxide layer is located over the active regions and the corners, which may also include edges of the active regions, and a ratio of a thickness of the oxide layer over the corners to a thickness of the oxide layer over the active regions ranges from about 0.6:1 to about 0.8:1. A gate is located over the active region and the oxide layer.