The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Dec. 31, 2008
Applicants:
Dah-chuen Ho, Taichung, TW;
Chien-shao Tang, Hsinchu, TW;
Yu-chang Jong, Hsinchu, TW;
Zhe-yi Wang, Hsinchu, TW;
Inventors:
Dah-Chuen Ho, Taichung, TW;
Chien-Shao Tang, Hsinchu, TW;
Yu-Chang Jong, Hsinchu, TW;
Zhe-Yi Wang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high-voltage Schottky diode including a deep P-well having a first width is formed on the semiconductor substrate. A doped P-well is disposed over the deep P-well and has a second width that is less than the width of the deep P-well. An M-type guard ring is formed around the upper surface of the second doped well, A Schottky metal is disposed on an upper surface of the second doped well and the N-type guard ring.