The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Aug. 21, 2008
Zhong Dong, Fremont, CA (US);
Ching-hwa Chen, Milpitas, CA (US);
Zhong Dong, Fremont, CA (US);
Ching-Hwa Chen, Milpitas, CA (US);
ProMOS Technologies Pte. Ltd., Singapore, SG;
Abstract
After forming a stack of layers () for a transistor or a charge-trapping memory over an active area (), and before etching isolation trenches () in the semiconductor substrate () with the stack as a mask, spacers () are formed on the stack's sidewalls. The trench etch may include a lateral component, so the top edges of the trenches may be laterally recessed to a position under the spacers or the stack. After the etch, the spacers are removed to facilitate filling the trenches with the dielectric (to eliminate voids at the recessed top edges of the trenches). Other embodiments are also provided.