The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Aug. 20, 2007
Kyung-in Choi, ChunCheon-si, KR;
Gil-heyun Choi, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Jong-myeong Lee, Seongnam-si, KR;
Jong-won Hong, Suwon-si, KR;
Hyun-bae Lee, Suwon-si, KR;
Kyung-In Choi, ChunCheon-si, KR;
Gil-Heyun Choi, Seoul, KR;
Sang-Woo Lee, Seoul, KR;
Jong-Myeong Lee, Seongnam-si, KR;
Jong-Won Hong, Suwon-si, KR;
Hyun-Bae Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggo-Do, KR;
Abstract
An example embodiment provides a method of forming a conductive pattern in a semiconductor device. The method includes forming one or more dielectric layers over a first conductive pattern formed on a substrate; forming an opening in the one or more dielectric layers to expose a portion of the first conductive pattern, forming a growth promoting layer over the exposed portion of the first conductive pattern and the one or more dielectric layers, forming a growth inhibiting layer over a portion of the growth promoting layer, and forming the second conductive layer in the opening.